[SCI-2010] Characteristics of a Fabricated PIN Photodiode for a Matching With a CsI(TI) Scintillator
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Characteristics of a Fabricated PIN Photodiode

for a Matching With a CsI(TI) Scintillator

 

Han Soo Kim, Se Hwan Park, Jang Ho Ha, Dong Hoon Lee,

and Seung Yeon Cho

 

  Recently a PIN photodiode is more widely used than a conventional PMT, because it requires less bias to operate it and it is very compact. A PIN photodiode was designed and fabricated for a matching with a CsI(TI) scintillator in consideration of low leakage current and high biasing voltage. Leakage current and spectral response were measured with the fabricated PIN photodiode as preliminary tests. A CsI(TI)/PIN photodiode radiation detector was also fabricated and about 10.4% FWHM was achieved at 662keV gamma-ray. In this study, characteristics of a fabricated PIN photodiode and a CsI(TI)/PIN photodiode radiation detector were presented. Several important aspects to consider in the fabrication of a Si PIN photodiode radiation detector are also addressed.

 

Keywords: CsI(TI)/PIN-type, edge protection, gamma-ray, leakage current, PIN photodiode, spectral response

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