[SCI-2009] Fabrication and performance characteristics of a CsI(TI)/PIN diode radiation sensor for industrial applications
작성자 관리자 등록일 2011.01.12
첨부파일 SCI [2009_ARI] CsI(Tl)_PINdioderadiation_1st.pdf 조회수 1525

Fabrication and performance characteristics

of a CsI(TI)/PIN diode radiation sensor for industrial applications

 

Han Soo Kim, Jang Ho Ha, Se Hwan Park,

 Seung Yeon Cho, and Yong Kyun Kim

 

  CsI(TI)/PIN diode radiation sensors were fabricated for application in various fields such as an NDT and an environmental radiation monitoring system. CsI(TI) crystals of 11x11x21㎣ were processed as optical grade from a CsI(TI) ingot and matched with PIN diodes in consideration of the light loss and the external impact. The photodiode signal is amplified by a low-noise preamplifier and a pulse shape amplifier. At room temperature, the fabricated CsI(TI)/PIN diode radiation sensors demonstrate an energy resolution of 7.9% for 660keV gamma rays and 4.9% for 1330keV. The fluctuation of the directional dependency was below 14% from 0 to 90 degree for the incident 660keV gamma rays. The copactness, the low-voltage power supply and the physical hardness are very useful features for industrial applications of the fabricated CsI(TI)/PIN diode sensor.

 

Keywords: CsI(TI), PIN diode, Photon counting, Gamma rays, NDT

다음글 [SCI-2009] Development of a beta gauge system for a fabric density measurement
이전글 [SCI-2008] Development of a high pressure Xe Ionization chamber for Environmental Radiation Spectroscopy